? semiconductor components industries, llc, 2011 october, 2011 ? rev. 11 1 publication order number: TIP29b/d TIP29, a, b, c (npn), tip30, a, b, c (pnp) complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications. compact to ? 220 ab package. features ? pb ? free packages are available* maximum ratings rating symbol 29 30 29a 30a 29b 30b 29c 30c unit collector ? emitter voltage v ceo 40 60 80 100 vdc collector ? base voltage v cb 40 60 80 100 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous ? peak i c 1.0 3.0 adc base current i b 0.4 adc total power dissipation @ t c = 25 c derate above 25 c p d 30 0.24 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c unclamped inductive load energy (note 1) e 32 mj operating and storage junction temperature range t j , t stg ? 65 to + 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient r ja 62.5 c/w thermal resistance, junction ? to ? case r jc 4.167 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. this rating based on testing with l c = 20 mh, r be = 100 , v cc = 10 v, i c = 1.8 a, p.r.f = 10 hz *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to ? 220ab case 221a style 1 marking diagram 1 ampere power transistors complementary silicon 40, 60, 80, 100 volts, 80 watts http://onsemi.com 1 2 3 4 tipxxx = device code: 29, 29a, 29b, 29c 30, 30a, 30b, 30c a = assembly location y = year ww = work week g=pb ? free package tipxxxg ayww see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information style 1: pin 1. base 2. collector 3. emitter 4. collector
TIP29, a, b, c (npn), tip30, a, b, c (pnp) http://onsemi.com 2 figure 1. darlington circuit schematic base emitter collector 8.0 k 120 base emitter collector 8.0 k 120 ordering information device package shipping TIP29 to ? 220 50 units / rail TIP29g to ? 220 (pb ? free) 50 units / rail TIP29a to ? 220 50 units / rail TIP29ag to ? 220 (pb ? free) 50 units / rail TIP29b to ? 220 50 units / rail TIP29bg to ? 220 (pb ? free) 50 units / rail TIP29c to ? 220 50 units / rail TIP29cg to ? 220 (pb ? free) 50 units / rail tip30 to ? 220 50 units / rail tip30g to ? 220 (pb ? free) 50 units / rail tip30a to ? 220 50 units / rail tip30ag to ? 220 (pb ? free) 50 units / rail tip30b to ? 220 50 units / rail tip30bg to ? 220 (pb ? free) 50 units / rail tip30c to ? 220 50 units / rail tip30cg to ? 220 (pb ? free) 50 units / rail
TIP29, a, b, c (npn), tip30, a, b, c (pnp) http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (i c = 30 madc, i b = 0) (note 2) TIP29, tip30 TIP29a, tip30a TIP29b, tip30b TIP29c, tip30c v ceo(sus) 40 60 80 100 ? ? ? ? vdc collector cutoff current (v ce = 30 vdc, i b = 0) TIP29, TIP29a, tip30, tip30a (v ce = 60 vdc, i b = 0) TIP29b, TIP29c, tip30b, tip30c i ceo ? ? 0.3 0.3 madc collector cutoff current (v ce = 40 vdc, v eb = 0) TIP29, tip30 (v ce = 60 vdc, v eb = 0) TIP29a, tip30a (v ce = 80 vdc, v eb = 0) TIP29b, tip30b (v ce = 100 vdc, v eb = 0) TIP29c, tip30c i ces ? ? ? ? 200 200 200 200 adc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 1.0 madc on characteristics (note 2) dc current gain (i c = 0.2 adc, v ce = 4.0 vdc) dc current gain (i c = 1.0 adc, v ce = 4.0 vdc) h fe 40 15 ? 75 ? collector ? emitter saturation voltage (i c = 1.0 adc, i b = 125 madc) v ce(sat) ? 0.7 vdc base ? emitter on voltage (i c = 1.0 adc, v ce = 4.0 vdc) v be(on) ? 1.3 vdc dynamic characteristics current ? gain ? bandwidth product (note 3) (i c = 200 madc, v ce = 10 vdc, f test = 1.0 mhz) f t 3.0 ? mhz small ? signal current gain (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 khz) h fe 20 ? ? 2. pulse test: pulse width 300 s, duty cycle 2.0% 3. f t = ? h fe ?? f test
TIP29, a, b, c (npn), tip30, a, b, c (pnp) http://onsemi.com 4 0.03 figure 2. dc current gain i c , collector current (amp) 0.03 h fe , dc current gain 0.5 5.0 70 3.0 100 7.0 300 30 0.1 0.3 0.07 1.0 t j = 150 c 25 c -55 c v ce = 2.0 v 500 10 50 3.0 t, time (s) figure 3. turn ? off time i c , collector current (amp) i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t s turn-on pulse approx +11 v v in 0 v eb(off) t 1 approx +11 v v in t 2 turn-off pulse t 3 t 1 7.0 ns 100 < t 2 < 500 s t 3 < 15 ns duty cycle 2.0% approx -9.0 v r b and r c varied to obtain desired current levels. scope r c r b v cc v in c jd << c eb -4.0 v figure 4. switching time equivalent circuit 0.03 figure 5. turn ? on time i c , collector current (amp) 0.02 0.1 3.0 0.07 1.0 1.0 i c /i b = 10 t j = 25 c t r @ v cc = 10 v t, time (s) 0.5 0.3 0.1 0.05 0.05 0.3 0.5 t d @ v eb(off) = 2.0 v 0.03 0.7 2.0 0.07 0.7 t r @ v cc = 30 v 0.05 0.7 t f @ v cc = 10 v t f @ v cc = 30 v 0.07 1.0 0.5 0.3 0.1 0.05 0.03 0.7 2.0 0.2 0.1 3.0 1.0 0.05 0.3 0.5 0.07 0.7 2.0 0.2 figure 6. active region safe operating area v ce , collector-emitter voltage, (volts) 10 0.1 10 second breakdown limited thermally limited @ t c = 25 c bonding wire limited i c , collector current (amps) 1.0 20 10 0 40 3.0 4.0 0.1 TIP29, 30 TIP29a, 30a TIP29b, 30b TIP29c, 30c t j = 150 c curves apply below rated v ceo 1 ms dc 5 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
TIP29, a, b, c (npn), tip30, a, b, c (pnp) http://onsemi.com 5 package dimensions to ? 220 case 221a ? 09 issue ag notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.036 0.64 0.91 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 TIP29b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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